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Fwd: Usage of SECS1D (dimensions of input variables)


From: Michael Goffioul
Subject: Fwd: Usage of SECS1D (dimensions of input variables)
Date: Mon, 3 Mar 2008 15:23:55 +0100

This function is part of an octave-forge package, which is a
 separate entity from octave itself (the binary package bundles
 everything together for your convenience).

 Forwarding to the right mailing list. Please use it for further
 mails in this thread.

 Michael.




 ---------- Forwarded message ----------
 From: Johannes F Dorfner <address@hidden>
 Date: Mon, Mar 3, 2008 at 3:03 PM
 Subject: Usage of SECS1D (dimensions of input variables)
 To: address@hidden


 Hi,

  I want to use the SECS1D package (v0.0.4) provided with octave-3.0.0
  [under WinXP in the case that matters]. I have serious problems in
  guessing which parameter dimensions and types the function DDGnlpoisson
  [1] takes. Currently I run in "nonconformant arguments"-errors when
  using standard row vectors as inputs [2]:

  > error: quotient: nonconformant arguments (op1 is 98x1, op2 is 1x98)
  > error: evaluating binary operator './' near line 33, column 28
  [Ucomplap.m]

  Is there a way (apart from trial and error) to find out what dimensions
  the parameters should be?

  Thanks in advance for hints,
  Johannes Dorfner



  --
  [1]: http://octave.sourceforge.net/doc/f/DDGnlpoisson.html

  [2]: octave script file to test DDGnlpoisson()
  % ------------------------------------------------------------------
  % geometry and boundary condition
  L = 200e-9; % length of the device
  U_0 = 2; % potential of contact 2 relative to contact 1
  N_v = 1e21*1e8; % density of states [m^-3]
  N = 100; % number of grid points

  % INPUT
  x = linspace(0, L, N); % spatial grid
  sinodes = 1:N; % index of the nodes of the grid which are in the
                % semiconductor subdomain(remaining nodes are assumed
                % to be in the oxide subdomain)
  Vin=linspace(0,U_0,N); % initial guess for the electrostatic potential
  nin=linspace(0,0,N); % initial guess for electron concentration
  pin=linspace(N_v,N_v,N); % initial guess for hole concentration
  Fnin=1*q; % initial guess for electron Fermi potential
  Fpin=1*q; % initial guess for hole Fermi potential
  D=linspace(0,0,N); % doping profile; here: intrinsic case
  l2=0; % scaled electric permittivity (diffusion coefficient)
  tolerance=1e-3; % tolerance for convergence test
  maxiter=100; % maximum number of Newton iterations
  verbosity=2; % verbosity level: 0,1,2

  % OUTPUT
  % V       electrostatic potential
  % n       electron concentration
  % p       hole concentration
  % res     residual norm at each step
  % niter   number of Newton iterations

  % RUN
  [V,n,p,res,niter] = DDGnlpoisson
  (x,sinodes,Vin,nin,pin,Fnin,Fpin,D,l2,tolerance,maxiter,verbosity)
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